maximum ratings (t j = 125 c unless otherwise noted) rating symbol v alue unit reverse voltage v r 30 v olts forward power dissipation @ t a = 25 c derate above 25 c p d 225 2.0 mw mw/ c forward current (dc) i f 200 max ma junction temperature t j 125 max c storage temperature range t stg ? 55 to +150 c electrical characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min ty p max unit reverse breakdown v oltage (i r = 10 a) v (br)r 30 ? ? v olts t otal capacitance (v r = 1.0 v, f = 1.0 mhz) c t ? ? 10 pf reverse leakage (v r = 25 v) i r ? 0.5 2.0 adc forward voltage (i f = 0.1 madc) v f ? 0.22 0.24 vdc forward voltage (i f = 30 madc) v f ? 0.41 0.5 vdc forward voltage (i f = 100 madc) v f ? 0.52 1.0 vdc reverse recovery t ime (i f = i r = 10 madc, i r(rec) = 1.0 madc) figure 1 t rr ? ? 5.0 ns forward voltage (i f = 1.0 madc) v f ? 0.29 0.32 vdc forward voltage (i f = 10 madc) v f ? 0.35 0.40 vdc forward current (dc) i f ? ? 200 madc repetitive peak forward current i frm ? ? 300 madc non?repetitive peak forward current (t < 1.0 s) i fsm ? ? 600 madc these schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. extremely low forward voltage reduces conduction loss. miniature surface mount package is excellent for hand held and portable applications where space is limited. ? extremely fast switching speed ? low forward voltage ? 0.35 volts (typ) @ i f = 10 madc ? device marking and ordering information device marking shipping 3000/tape&reel 10000/tape&reel leshan radio comp any, ltd. we declare that the material of product compliance with rohs requirements. LBAT54DW1T1G 1 3 2 sc-88/sot-363 6 4 5 surface mount schottky barrier diode array rev.a 1/3 LBAT54DW1T1G lbat54dw1t3g sv3 sv3
notes: 1. a 2.0 k ? variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2 k 820 ? 0.1 f dut v r 100 h 0.1 f 50 ? output pulse genera tor 50 ? input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 1 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1 ma) i f input signal figure 1. recovery t ime equivalent test circuit 100 0.0 0.1 v f , forward voltage (volts) 0.2 0.3 0.4 0.5 10 1.0 0.1 85 c 10 0 v r , reverse vol tage (volts) 1.0 0.1 0.01 0.001 5101520 25 14 0 v r , reverse voltage (volts) 12 4 2 0 c t , t otal capacitance (pf) 51 015 30 i f , for ward current (ma) figure 2. forward v oltage figure 3. leakage current figure 4. total capacitance ?4 0 c 25 c t a = 150 c t a = 125 c t a = 85 c t a = 25 c i r , reverse current ( a) 0.6 ?5 5 c 15 0 c 12 5 c 100 1000 30 25 20 6 8 10 leshan radio comp any, ltd. LBAT54DW1T1G rev.a 2/3
no tes: 1 . dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.031 0.043 0.80 1.10 d 0.004 0.012 0.10 0.30 g 0.026 bsc 0.65 bsc h --- 0.004 --- 0.10 j 0.004 0.010 0.10 0.25 k 0.004 0.012 0.10 0.30 n 0.008 ref 0.20 ref s 0.079 0.087 2.00 2.20 pin 1. emitter 2 2. base 2 3. collector 1 4.emitter 1 5. base 1 6.collector 2 b 0.2 (0.008) a g s h c n j k d 6 p l 6 5 4 1 2 3 - b - m m 0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm sc - 88/so t - 363 leshan radio comp any, ltd. LBAT54DW1T1G rev.a 3/3
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